mixers - double-balanced - chip 4 4 - 84 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC773 gaas mmic fundamental mixer, 6 - 26 ghz v01.0909 general description features functional diagram passive: no dc bias required high input ip3: +22 dbm high lo/rf isolation: 38 db wide if bandwidth: dc - 10 ghz upconversion & downconversion applications die size: 1.37 x 0.96 x 0.1 mm electrical speci cations, t a = +25 c, if = 0.5 ghz, lo = +13 dbm* typical applications the HMC773 is ideal for: ? point-to-point radios ? point-to-mulit-point radios & vsat ? test equipment & sensors ? military end-use the HMC773 is a general purpose double balanced mixer chip that can be used as an upconverter or downconverter between 6 and 26 ghz. this mixer requires no external components or matching cir- cuitry. the HMC773 provides excellent lo to rf and lo to if isolation due to optimized balun structures. the mixer operates with lo drive levels of +13 dbm. the HMC773 wideband mixer exhibits consistent conversion gain and compression across its band- width. the HMC773 is also available in smt format as the HMC773lc3b. parameter min. typ. max. min. typ. max. units frequency range, rf & lo 6 - 16 16 - 26 ghz frequency range, if dc - 10 dc - 10 ghz conversion loss 9 12 9 11 db lo to rf isolation 37 38 db lo to if isolation 31 37 20 30 db rf to if isolation 5 11 8 18 db ip3 (input) 18 22 dbm ip2 (input) 45 50 dbm 1 db gain compression (input) 10 12 dbm * unless otherwise noted, all measurements performed as downconverter, if = 0.5 ghz, lo = +13 dbm
mixers - double-balanced - chip 4 4 - 85 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com conversion gain vs. temperature conversion gain vs. lo drive isolation if bandwidth vs. temperature return loss upconverter performance conversion gain vs. lo drive HMC773 v01.0909 gaas mmic fundamental mixer, 6 - 26 ghz -20 -16 -12 -8 -4 0 6 8 10 12 14 16 18 20 22 24 26 28 +25c +85c -55c frequency (ghz) conversion gain (db) -20 -16 -12 -8 -4 0 6 8 10 12 14 16 18 20 22 24 26 28 9 dbm 11 dbm 13 dbm 15 dbm frequency (ghz) conversion gain (db) -20 -15 -10 -5 0 024681012 conversion gain if return loss frequency (ghz) response (db) -60 -50 -40 -30 -20 -10 0 6 8 10 12 14 16 18 20 22 24 26 28 lo/rf rf/if lo/if frequency (ghz) isolation (db) -20 -15 -10 -5 0 6 8 10 12 14 16 18 20 22 24 26 28 rf lo frequency (ghz) return loss (db) -20 -16 -12 -8 -4 0 6 8 10 12 14 16 18 20 22 24 26 28 9 dbm 11 dbm 13 dbm 15 dbm frequency (ghz) conversion gain (db)
mixers - double-balanced - chip 4 4 - 86 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input ip2 vs. temperature * input ip3 vs. lo drive * input ip3 vs. temperature* input ip2 vs. lo drive * * two-tone input power = -5 dbm each tone, 1 mhz spacing. input p1db vs. lo drive input p1db vs. temperature HMC773 v01.0909 gaas mmic fundamental mixer, 6 - 26 ghz 0 5 10 15 20 25 30 6 8 10 12 14 16 18 20 22 24 26 28 9 dbm 11 dbm 13 dbm 15 dbm frequency (ghz) ip3 (dbm) 0 10 20 30 40 50 60 70 80 6 8 10 12 14 16 18 20 22 24 26 28 9 dbm 11 dbm 13 dbm 15 dbm frequency (ghz) ip2 (dbm) 0 4 8 12 16 20 6 8 10 12 14 16 18 20 22 24 26 28 11 dbm 13 dbm 15 dbm frequency (ghz) p1db (dbm) 0 5 10 15 20 25 30 6 8 10 12 14 16 18 20 22 24 26 28 +25c +85c -55c frequency (ghz) ip3 (dbm) 0 10 20 30 40 50 60 70 80 6 8 10 12 14 16 18 20 22 24 26 28 +25c +85c -55c frequency (ghz) ip2 (dbm) 0 4 8 12 16 20 6 8 10 12 14 16 18 20 22 24 26 28 +25c +85c -55c frequency (ghz) p1db (dbm)
mixers - double-balanced - chip 4 4 - 87 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mxn spurious outputs nlo mrf01234 0xx14.530.331.353.3 10021.622.546.7 269.061.762.563.774.6 3 >100 79.4 65.8 68.2 59.6 rf = 18 ghz @ -10 dbm lo = 17 ghz @ +13 dbm all values in dbc below the if output power level. absolute maximum ratings rf / if input +21 dbm lo drive +21 dbm channel temperature 150 c continuous pdiss (ta = 85 c) (derate 3.26 mw/c above 85 c) 212 mw thermal resistance (junction to die bottom) 306 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c electrostatic sensitive device observe handling precautions outline drawing HMC773 v01.0909 gaas mmic fundamental mixer, 6 - 26 ghz
mixers - double-balanced - chip 4 4 - 88 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad number function description interface schematic 1lo this pin is dc coupled and matched to 50 ohms. 2rf this pin is dc coupled and matched to 50 ohms. 3if this pin is dc coupled. for applications not requiring opera- tion to dc, this port should be dc blocked externally using a series capacitor whose value has been chosen to pass the necessary if frequency range. for operation to dc, this pin must not source or sink more than 2 ma of current or part non-function and possible part failure will result. pad descriptions assembly diagram HMC773 v01.0909 gaas mmic fundamental mixer, 6 - 26 ghz
mixers - double-balanced - chip 4 4 - 89 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC773 v01.0909 gaas mmic fundamental mixer, 6 - 26 ghz mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the sur- face of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. typical die-to-substrate spacing is 0.076mm (3 mils). gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on rf, lo & if ports. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against > 250v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mount ing surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possib le, less than 12 mils (0.31 mm). 0.102mm (0.004?) thick gaas mmic 3 mil ribbon bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic 3 mil ribbon bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab
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